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Other articles related with "two-dimensional electron gas"：
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117302 |
Yue-Bo Liu(柳月波), Jun-Yu Shen(沈俊宇), Jie-Ying Xing(邢洁莹), Wan-Qing Yao(姚婉青), Hong-Hui Liu(刘红辉), Ya-Qiong Dai(戴雅琼), Long-Kun Yang(杨隆坤), Feng-Ge Wang(王风格), Yuan Ren(任远), Min-Jie Zhang(张敏杰), Zhi-Sheng Wu(吴志盛), Yang Liu(刘扬), and Bai-Jun Zhang(张佰君) |
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Abnormal phenomenon of source-drain current of AlGaN/GaN heterostructure device under UV/visible light irradiation |
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Chin. Phys. B
2021 Vol.30 (11): 117302-117302
[Abstract]
(591)
[HTML 0 KB]
[PDF 1845 KB]
(27)
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77302 |
Wen-Xiao Shi(时文潇), Hui Zhang(张慧), Shao-Jin Qi(齐少锦), Jin-E Zhang(张金娥), Hai-Lin Huang(黄海林), Bao-Gen Shen(沈保根), Yuan-Sha Chen(陈沅沙), and Ji-Rong Sun(孙继荣) |
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Thermodynamic criterion for searching high mobility two-dimensional electron gas at KTaO3 interface |
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Chin. Phys. B
2021 Vol.30 (7): 77302-077302
[Abstract]
(449)
[HTML 1 KB]
[PDF 1294 KB]
(197)
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107305 |
Feng Chi(迟锋), Zhen-Guo Fu(付振国), Liming Liu(刘黎明), Ping Zhang(张平) |
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Enhanced spin-dependent thermopower in a double-quantum-dot sandwiched between two-dimensional electron gases |
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Chin. Phys. B
2019 Vol.28 (10): 107305-107305
[Abstract]
(502)
[HTML 1 KB]
[PDF 611 KB]
(114)
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117804 |
Hong Yan(闫虹), Zhaoting Zhang(张兆亭), Shuanhu Wang(王拴虎), Kexin Jin(金克新) |
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Review of photoresponsive properties at SrTiO3-based heterointerfaces |
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Chin. Phys. B
2018 Vol.27 (11): 117804-117804
[Abstract]
(596)
[HTML 1 KB]
[PDF 6583 KB]
(463)
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97201 |
Jing Zhang(张静), Hongliang Lv(吕红亮), Haiqiao Ni(倪海桥), Zhichuan Niu(牛智川), Yuming Zhang(张玉明) |
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Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and high electron mobility transistors |
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Chin. Phys. B
2018 Vol.27 (9): 97201-097201
[Abstract]
(706)
[HTML 1 KB]
[PDF 849 KB]
(223)
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47101 |
Jin-Lun Li(李金伦), Shao-Hui Cui(崔少辉), Jian-Xing Xu(徐建星), Xiao-Ran Cui(崔晓然), Chun-Yan Guo(郭春妍), Ben Ma(马奔), Hai-Qiao Ni(倪海桥), Zhi-Chuan Niu(牛智川) |
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Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector |
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Chin. Phys. B
2018 Vol.27 (4): 47101-047101
[Abstract]
(736)
[HTML 1 KB]
[PDF 1343 KB]
(275)
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37101 |
Fu-Ning Wang(王芙凝), Ji-Chao Li(李吉超), Xin-Miao Zhang(张鑫淼), Han-Zhang Liu(刘汉璋), Jian Liu(刘剑), Chun-Lei Wang(王春雷), Ming-Lei Zhao(赵明磊), Wen-Bin Su(苏文斌), Liang-Mo Mei(梅良模) |
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Electrical property effect of oxygen vacancies in the heterojunction of LaGaO3/SrTiO3 |
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Chin. Phys. B
2017 Vol.26 (3): 37101-037101
[Abstract]
(698)
[HTML 1 KB]
[PDF 529 KB]
(360)
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117801 |
Xiaoguang Wu(吴晓光) |
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Exchange effect and magneto-plasmon mode dispersion in an anisotropic two-dimensional electronic system |
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Chin. Phys. B
2016 Vol.25 (11): 117801-117801
[Abstract]
(618)
[HTML 0 KB]
[PDF 345 KB]
(257)
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96801 |
Shu-Xing Zhou(周书星), Ming Qi(齐鸣), Li-Kun Ai(艾立鹍), An-Huai Xu(徐安怀) |
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Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-based InxGa1-xAs/In0.52Al0.48As HEMT structures |
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Chin. Phys. B
2016 Vol.25 (9): 96801-096801
[Abstract]
(628)
[HTML 1 KB]
[PDF 303 KB]
(374)
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76802 |
Sheng-Chun Shen(沈胜春), Yan-Peng Hong(洪彦鹏), Cheng-Jian Li(厉承剑), Hong-Xia Xue(薛红霞), Xin-Xin Wang(王欣欣), Jia-Cai Nie(聂家财) |
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In-plane anisotropy in two-dimensional electron gas at LaAlO3/SrTiO3(110) interface |
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Chin. Phys. B
2016 Vol.25 (7): 76802-076802
[Abstract]
(710)
[HTML 1 KB]
[PDF 614 KB]
(467)
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96802 |
He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生), Zhu Jian-Jun (朱建军), Chen Ping (陈平), Liu Zong-Shun (刘宗顺), Le Ling-Cong (乐伶聪), Yang Jing (杨静), Li Xiao-Jing (李晓静), Zhang Shu-Ming (张书明), Yang Hui (杨辉) |
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Growth condition optimization and mobility enhancement throughprolonging the GaN nuclei coalescence process of AlGaN/AlN/GaN structure |
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Chin. Phys. B
2015 Vol.24 (9): 96802-096802
[Abstract]
(698)
[HTML 1 KB]
[PDF 231 KB]
(415)
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67301 |
He Xiao-Guang (何晓光), Zhao De-Gang (赵德刚), Jiang De-Sheng (江德生) |
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Formation of two-dimensional electron gas at AlGaN/GaN heterostructure and the derivation of its sheet density expression |
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Chin. Phys. B
2015 Vol.24 (6): 67301-067301
[Abstract]
(820)
[HTML 1 KB]
[PDF 473 KB]
(2236)
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37301 |
Du Yan-Ling (杜颜伶), Wang Chun-Lei (王春雷), Li Ji-Chao (李吉超), Zhang Xin-Hua (张新华), Wang Fu-Ning (王芙凝), Liu Jian (刘剑), Zhu Yuan-Hu (祝元虎), Yin Na (尹娜), Mei Liang-Mo (梅良模) |
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Two-dimensional metallic behavior at polar MgO/BaTiO3 (110) interfaces |
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Chin. Phys. B
2015 Vol.24 (3): 37301-037301
[Abstract]
(624)
[HTML 0 KB]
[PDF 793 KB]
(549)
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87302 |
Du Yan-Ling (杜颜伶), Wang Chun-Lei (王春雷), Li Ji-Chao (李吉超), Xu Pan-Pan (徐攀攀), Zhang Xin-Hua (张新华), Liu Jian (刘剑), Su Wen-Bin (苏文斌), Mei Liang-Mo (梅良模) |
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Stability and electronic structure studies of LaAlO3/SrTiO3 (110) heterostructures |
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Chin. Phys. B
2014 Vol.23 (8): 87302-087302
[Abstract]
(606)
[HTML 1 KB]
[PDF 753 KB]
(459)
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47201 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Yang Ming (杨铭), Wang Yu-Tang (王玉堂) |
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Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors |
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Chin. Phys. B
2014 Vol.23 (4): 47201-047201
[Abstract]
(473)
[HTML 1 KB]
[PDF 336 KB]
(478)
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127301 |
Xie Yan-Wu (谢燕武), Hwang Harold Y |
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Tuning the electrons at the LaAlO3/SrTiO3 interface：From growth to beyond growth |
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Chin. Phys. B
2013 Vol.22 (12): 127301-127301
[Abstract]
(804)
[HTML 1 KB]
[PDF 1831 KB]
(1962)
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117306 |
Tan Ren-Bing (谭仁兵), Qin Hua (秦华), Zhang Xiao-Yu (张晓渝), Xu Wen (徐文) |
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Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors |
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Chin. Phys. B
2013 Vol.22 (11): 117306-117306
[Abstract]
(606)
[HTML 1 KB]
[PDF 342 KB]
(960)
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116803 |
Chen Yun-Zhong (陈允忠), Nini Pryds, Sun Ji-Rong (孙继荣), Shen Bao-Gen (沈保根), Søren Linderoth |
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High-mobility two-dimensional electron gases at oxide interfaces：Origin and opportunities |
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Chin. Phys. B
2013 Vol.22 (11): 116803-116803
[Abstract]
(675)
[HTML 1 KB]
[PDF 1772 KB]
(1444)
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67203 |
Yu Ying-Xia (于英霞), Lin Zhao-Jun (林兆军), Luan Chong-Biao (栾崇彪), Wang Yu-Tang (王玉堂), Chen Hong (陈弘), Wang Zhan-Guo (王占国) |
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Electron mobility in the linear region of AlGaN/AlN/GaN heterostructure field-effect transistor |
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Chin. Phys. B
2013 Vol.22 (6): 67203-067203
[Abstract]
(663)
[HTML 1 KB]
[PDF 550 KB]
(649)
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77201 |
Sun Li-Feng (孙立风), Dong Li-Min (董利民), Wu Zhi-Fang (吴志芳), Fang Chao (房超) |
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A comparison of the transport properties of bilayer graphene, monolayer graphene, and two-dimensional electron gas |
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Chin. Phys. B
2013 Vol.22 (7): 77201-077201
[Abstract]
(758)
[HTML 1 KB]
[PDF 376 KB]
(718)
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17202 |
Zhang Xue-Feng (张雪锋), Wang Li (王莉), Liu Jie (刘杰), Wei Lai (魏崃), Xu Jian (许键) |
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Electrical characteristics of AlInN/GaN HEMTs under cryogenic operation |
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Chin. Phys. B
2013 Vol.22 (1): 17202-017202
[Abstract]
(1064)
[HTML 0 KB]
[PDF 330 KB]
(2229)
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108504 |
Sun Yun-Fei (孙云飞), Sun Jan-Dong (孙建东), Zhang Xiao-Yu (张晓渝), Qin Hua (秦华), Zhang Bao-Shun (张宝顺), Wu Dong-Min (吴东岷) |
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Enhancement of terahertz coupling efficiency by improved antenna design in GaN/AlGaN high electron mobility transistor detectors |
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Chin. Phys. B
2012 Vol.21 (10): 108504-108504
[Abstract]
(1223)
[HTML 1 KB]
[PDF 3873 KB]
(1322)
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67201 |
Ji Dong(冀东), Liu Bing(刘冰), Lu Yan-Wu(吕燕伍), Zou Miao(邹杪), and Fan Bo-Ling(范博龄) |
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Influence of a two-dimensional electron gas on current–voltage characteristics of Al0.3Ga0.7 N/GaN high electron mobility transistors |
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Chin. Phys. B
2012 Vol.21 (6): 67201-067201
[Abstract]
(1288)
[HTML 1 KB]
[PDF 138 KB]
(769)
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57201 |
Duan Bao-Xing(段宝兴) and Yang Yin-Tang(杨银堂) |
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Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer |
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Chin. Phys. B
2012 Vol.21 (5): 57201-057201
[Abstract]
(1375)
[HTML 1 KB]
[PDF 562 KB]
(1477)
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97302 |
Ma Xiao-Hua(马晓华), Ma Ping(马平), Jiao Ying(焦颖), Yang Li-Yuan(杨丽媛), Ma Ji-Gang(马骥刚), He Qiang(贺强), Jiao Sha-Sha(焦莎莎), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃) |
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Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures |
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Chin. Phys. B
2011 Vol.20 (9): 97302-097302
[Abstract]
(1520)
[HTML 1 KB]
[PDF 544 KB]
(941)
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2998 |
Zhang Jin-Cheng(张进成), Zheng Peng-Tian(郑鹏天), Zhang Juan(张娟), Xu Zhi-Hao(许志豪), and Hao Yue(郝跃) |
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Degradation mechanism of two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures |
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Chin. Phys. B
2009 Vol.18 (7): 2998-3001
[Abstract]
(1421)
[HTML 1 KB]
[PDF 1804 KB]
(895)
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4970 |
Gao Zhi-Yuan(高志远),Hao Yue(郝跃), Zhang Jin-Cheng(张进城), Li Pei-Xian(李培咸), and Gu Wen-Ping(谷文萍) |
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Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure |
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Chin. Phys. B
2009 Vol.18 (11): 4970-4975
[Abstract]
(1632)
[HTML 1 KB]
[PDF 661 KB]
(881)
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2689 |
Zhang Jin-Feng(张金风), Mao Wei(毛维), Zhang Jin-Cheng(张进城), and Hao Yue(郝跃) |
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The low-temperature mobility of two-dimensional electron gas in AlGaN/GaN heterostructures |
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Chin. Phys. B
2008 Vol.17 (7): 2689-2695
[Abstract]
(1656)
[HTML 0 KB]
[PDF 743 KB]
(1263)
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290 |
Guo Bao-Zeng(郭宝增), Gong Na(宫娜), and Yu Fu-Qiang(于富强) |
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Calculations of two dimensional electron gas distributions in AlGaN/GaN material system |
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Chin. Phys. B
2008 Vol.17 (1): 290-295
[Abstract]
(1780)
[HTML 1 KB]
[PDF 181 KB]
(1796)
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1060 |
Zhang Jin-Feng (张金风), Wang Chong (王冲), Zhang Jin-Cheng (张进城), Hao Yue (郝 跃) |
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Effects of donor density and temperature on electron systems in AlGaN/AlN/GaN and AlGaN/GaN structures |
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Chin. Phys. B
2006 Vol.15 (5): 1060-1066
[Abstract]
(1813)
[HTML 1 KB]
[PDF 357 KB]
(986)
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2735 |
Li Dong-Lin(李东临) and Zeng Yi-Ping(曾一平） |
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Self-consistent analysis of double-$\delta$-doped InAlAs/InGaAs/InP HEMTs |
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Chin. Phys. B
2006 Vol.15 (11): 2735-2741
[Abstract]
(1491)
[HTML 1 KB]
[PDF 163 KB]
(693)
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